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Utsource electronic components RJP30E2(600V)
Item Symbol Ratings Unit Collector to emitter voltage VCES 360 V Gate to emitter voltage VGES ±30 V Collector current Ic 35 A Collector peak current ic(peak) Note1 200 A Collector dissipation PC Note2 25 W Junction to case thermal impedance θj-c 5 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
> Trench gate technology (G5H series)
> Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
> High speed switching tf = 150 ns typ
> Low leak current ICES = 1 μA max
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Added (m.d.y): 04.21.2017
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