SG01M-B18 UVB-only SiC Based UV Photodiode

SG01M-B18
UVB-only SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-B18 UV Photodiode
• UVB-only sensitivity, PTB reported high chip stability
• Active Area A = 0.20 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cm2 peak radiation results a current of approx. 2500 nA

SG01M-B18 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.125/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 231 - 309nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak): 2500nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V